? 2006 ixys all rights reserved g d s g = gate d = drain s = source tab = drain ds99376e(12/06) polarhv tm power mosfet v dss = 600 v i d25 =26 a r ds(on) 270 m n-channel enhancement mode avalanche rated to-3p (ixtq) g d s d (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.0 v i gss v gs = 30 v, v ds = 0 v 100 na i dss v ds = v dss 10 a v gs = 0 v t j = 125 c 250 a r ds(on) v gs = 10 v, i d = 0.5 i d25 270 m pulse test, t 300 s, duty cycle d 2 % symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c; r gs = 1 m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c26a i dm t c = 25 c, pulse width limited by t jm 65 a i ar t c = 25 c13a e ar t c = 25 c40mj e as t c = 25 c 1.2 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 10 v/ns t j 150 c, r g = 5 p d t c = 25 c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (to-3p&to-247) 1.13/10 nm/lb.in. f c mounting force (plus220) 11..65/2.5..15 n/lb weight to-3p 5.5 g to-247 6.0 g to-268 5.0 g plus220 & plus220smd 4.0 g IXTH26N60P ixtq26n60p ixtt26n60p ixtv26n60p ixtv26n60ps to-247 (ixth) g s d (tab) plus220smd (ixtv_s) g s d plus220 (ixtv) d (tab) features z fast recovery diode z unclamped inductive switching (uis) rated z international standard packages z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density to-268 (ixtt) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXTH26N60P ixtq26n60p ixtt26n60p ixtv26n60p ixtv26n60ps fig. 2. extended output characteristics @ 25 o c 0 6 12 18 24 30 36 42 48 54 60 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 o c 0 4 8 12 16 20 24 0123 4567 v d s - volts i d - amperes v gs = 10v 7v 5v 6v symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , pulse test 16 26 s c iss 4150 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 400 pf c rss 27 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 i d25 , i d = 0.5 i d25 27 ns t d(off) r g = 5 (external) 75 ns t f 21 ns q g(on) 72 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 27 nc q gd 24 nc r thjc 0.27 c/w r thcs to-3p, plus220 & to-247 0.21 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 26 a i sm repetitive 78 a v sd i f = i s , v gs = 0 v, pulse test 1.5 v t rr i f = 26a, -di/dt = 100 a/ s 500 n characteristic curves ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved fig. 3. output characteristics @ 125 o c 0 4 8 12 16 20 24 0 2 4 6 8 10 12 14 16 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction tem perature 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 26a i d = 13a v gs = 10v fig. 6. drain current vs. case temperature 0 3 6 9 12 15 18 21 24 27 30 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. i d 0.8 1.2 1.6 2 2.4 2.8 3.2 0 102030405060 i d - amperes r d s ( o n ) - normalize d t j = 125 o c t j = 25 o c v gs = 10v fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 4 4.5 5 5.5 6 6.5 7 7.5 v g s - volts i d - amperes t j = 125 o c 25 o c -40 o c fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 i d - amperes g f s - siemens t j = -40 o c 25 o c 125 o c IXTH26N60P ixtq26n60p ixtt26n60p ixtv26n60p ixtv26n60ps
ixys reserves the right to change limits, test conditions, and dimensions. IXTH26N60P ixtq26n60p ixtt26n60p ixtv26n60p ixtv26n60ps fig. 11. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030 4050607080 q g - nanocoulombs v g s - volts v ds = 300v i d = 13a i g = 10ma fig. 9. source current vs. source-to-drain voltage 0 10 20 30 40 50 60 70 80 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 v s d - volts i s - amperes t j = 125 o c t j = 25 o c fig. 12. m axim um transient the rm al re sis tance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - o c / w
? 2006 ixys all rights reserved to-268 (ixtt) outline IXTH26N60P ixtq26n60p ixtt26n60p ixtv26n60p ixtv26n60ps plus220smd (ixfv_s) outline plus220 (ixtv) outline to-247 (ixth) outline terminals: 1 - gate 2 - drain 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 to-3p (ixtq) outline
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